SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - OCTOBER 1995
7
BFN16
C
COMPLEMENTARY TYPE -
PARTMARKING DETAILS -
BFN17
DD
E
C
B
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
250
250
5
500
200
100
1
-65 to +150
UNIT
V
V
V
mA
mA
mA
W
°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
25
40
40
Typ.70
Typ.1.5
MHz
pF
MIN.
250
250
5
100
20
100
0.4
0.9
MAX.
UNIT
V
V
V
nA
µA
nA
V
V
CONDITIONS.
I
C
=100µA
I
C
=1mA
I
E
=100µA
V
CB
=250V
V
CB
=250V, T
amb
=150 °C
V
EB
=3V
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
I
C
=1mA,V
CE
=10V*
I
C
=10mA, V
CE
=10V
I
C
=30mA, V
CE
=10V
I
C
=20mA, V
CE
=10V*
f=20MHz
V
CB
=30V,f=1MHz
f
T
C
obo
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
For typical characteristics graphs see FMMTA42 datasheet
3 - 42
ZETEX [ ZETEX SEMICONDUCTORS ]
