SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 5 – MARCH 2001
✪
FEATURES
* High breakdown and low saturation voltages
APPLICATIONS
* Suitable for video output stages in TV sets
* Switching power supplies
COMPLEMENTARY TYPE:
BF621
PARTMARKING DETAIL –
DC
BF620
C
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
300
300
5
100
50
1
-65 to +150
UNIT
V
V
V
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Colector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer Ratio
Transition Frequency
Output Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CER
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
obo
50
100 Typical
0.8 Typical
MHz
pF
MIN.
300
300
5
10
20
50
10
10
0.6
0.9
MAX.
UNIT
V
V
V
nA
µ
A
nA
µ
A
CONDITIONS.
I
C
=10
µ
A, I
E
=0
I
C
=1mA, I
B
=0*
I
E
=100
µ
A, I
C
=0
V
CB
=200V, I
E
=0
V
CB
=200V, I
E
=0 †
V
CE
=200V, R
BE
=2.7K
Ω
V
CE
=200V, R
BE
=2.7K
Ω
†
V
EB
=5V, I
C
=0
I
C
=30mA, I
B
=5mA*
I
C
=20mA, I
B
=2mA*
I
C
=25mA, V
CE
=20V*
I
C
=10mA, V
CE
=10V
f=100MHz
V
CB
=30V, f=1MHz
µ
A
V
V
†T
amb
=150°C
*Measured under pulsed conditions.
For typical characteristics graphs see FMMTA42 datasheet.
TBA
ZETEX [ ZETEX SEMICONDUCTORS ]
