BCX71
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
V
(BR)CEO
V
(BR)EBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
-0.60
-0.68
-0.6
120
60
30
180
80
40
250
100
100
380
110
f
T
C
ebo
C
cbo
N
2
-0.12
-0.25
-0.70
-0.80
-0.55
-0.65
-0.72
140
170
200
250
270
350
340
500
180
11
6
6
MIN.
-45
-5
-20
-20
-20
-0.25
-0.55
-0.85
-1.05
-0.75
220
310
460
630
MHz
pF
pF
dB
TYP.
MAX.
UNIT
V
V
µ
A
CONDITIONS.
I
CEO
=-2mA
I
EBO
=-1
µ
A
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Emitter Cut-off
Current
Emitter-Base Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base - Emitter Voltage
Static
Forward
Current
Transfer
Ratio
nA
nA
V
V
V
V
V
V
V
V
CES
=-45V
V
CES
=-45V ,T
amb
=150
o
C
V
EBO
=-4V
I
C
=-10mA,I
B
= -0.25mA
I
C
=-50mA, I
B
=-1.25mA
I
C
=-10mA, I
B
=-0.25mA
I
C
=-50mA, I
B
=-1.25mA
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
I
C
=-10mA, V
CE
= -5V
f = 100MHz
V
EBO
= -0.5V,f =1MHz
V
CBO
= -10V, f =1MHz
I
C
=- 0.2mA, V
CE
=- 5V
R
G
=2K
Ω,
f=1KHz
∆
f=200Hz
-I
C
: I
B1
: - I
B2
=10:1:1mA
R
1
=R
2
=5K
Ω
V
BB
=-3.6V, R
L
=990
Ω
BCX71G
BCX71H
h
FE
BCX71J
BCX71K
Transition Frequency
Emitter-Base Capacitance
Collector-Base Capacitance
Noise Figure
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
t
d
t
r
t
on
t
s
t
f
t
off
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
ZETEX [ ZETEX SEMICONDUCTORS ]
