SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
BCX5316
C
COMPLIMENTARY TYPE – BCX5616
PARTMARKING DETAIL – AL
C
B
SOT89
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
-100
-80
-5
-1.5
-1
1
-65 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
25
100
25
150
25
MIN.
-100
-80
-5
-0.1
-20
-10
-0.5
-1.0
TYP.
MAX. UNIT
V
V
V
CONDITIONS.
IC =-100
µ
A
IC =-10mA
I
E
=-10
µ
A
V
CB
=-30V
V
CB
=-30V, T
amb
=150°C
V
EB
=-4V
I
C
=-500mA, I
B
=-50mA*
I
C
=-500mA, V
CE
=-2V*
I
C
=-5mA, V
CE
=-2V*
I
C
=-150mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
MHz
pF
I
C
=-50mA, V
CE
=-10V,
f=100MHz
V
CB
=-10V, f=1MHz
µ
A
µ
A
µ
A
V
V
250
f
T
C
obo
*Measured under pulsed conditions.
TBA
ZETEX [ ZETEX SEMICONDUCTORS ]
