SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 OCTOBER 1995
7
BCX41
2
PARTMARKING DETAIL EK
1
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
V
CES
V
CEO
V
EBO
I
CM
I
C
I
B
P
TOT
T
j
:T
stg
VALUE
125
125
5
1
800
100
330
-55 to +150
UNIT
V
V
V
A
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
100
10
10
75
100
0.9
1.4
25
63
40
100
12
µ
A
µ
A
µ
A
Collector-Base Cut-Off I
CES
Current
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
I
CEX
I
EBO
V
CE(sat)
V
BE(sat)
nA
V
CE
=100V
V
CE
=100V, T
amb
=150°C
V
CE
=100V,V
BE
=0.2V,T
amb
=85°C
V
CE
=100V,V
BE
=0.2V,
T
amb
=125°C
V
EB
=4V
I
C
=300mA, I
B
=30mA *
I
C
=300mA, I
B
=30mA *
I
C
=10
0µ
A, V
CE
=1V
I
C
=100mA, V
CE
=1V *
I
C
=200mA, V
CE
=1V *
nA
V
V
Static Forward
h
FE
Current Transfer Ratio
Transition Frequency
Output Capacitance
f
T
C
obo
MHz I
C
=10mA, V
CE
=5V
f =20MHz
pF
V
CB
=10V, I
E
=I
e
=0, f =1MHz
* Measured under pulsed conditions. Pulse width = 300
µ
s. Duty cycle 2%
3 - 33
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