BCW68
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
V
(BR)CES
-45
-60
-5
-20
-10
-20
-0.3
-0.7
V
I
CEO
=-10mA
IC=-10
µ
A
Emitter-Base Breakdown Voltage
Collector-Emitter
Cut-off Current
Emitter-Base Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Static
Forward
Current
Transfer
BCW68F
V
(BR)EBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
h
FE
h
FE
f
T
C
obo
C
ibo
N
V
nA
µ
A
nA
V
V
V
I
EBO
=-10
µ
A
V
CES
=-45V
V
CES
=-45V, T
amb
=150°C
V
EBO
=-4V
I
C
=-100mA, I
B
= -10mA
I
C
= -500mA, I
B
=-50mA*
I
C
=-500mA,I
B
=-50mA*
I
C
=-100mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-100mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-100mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-2V*
-2
100
35
160
60
250
100
100
170
250
BCW68G
250
400
BCW68H
350
630
Transition Frequency
MHz
I
C
=-20mA, V
CE
=-10V
f = 100MHz
V
CB
=-10V, f =1MHz
V
EB
=-0.5V, f =1MHz
I
C
= -0.2mA, V
CE
=- 5V
R
G
=1K
Ω,
f=1KH
∆
f=200Hz
Output Capacitance
Input Capacitance
Noise Figure
12
18
80
pF
pF
dB
2
10
Switching times:
Turn-On Time
Turn-Off Time
t
on
t
off
100
400
ns
ns
I
C
=-150mA
I
B1
=- I
B2
=-15mA
R
L
=150
Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions.
TBA
ZETEX [ ZETEX SEMICONDUCTORS ]
