SOT23 PNP SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 3 SEPTEMBER 1995
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE
PARTMARKING DETAILS
BCV26 - BCV27
BCV46 - BCV47
BCV26 - ZFD
BCV46 - ZFE
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
BCV46
MIN. MAX.
-80
-60
-10
-100
-10
I
EBO
V
CE(sat)
V
BE(sat)
-100
-1.0
-1.5
4K
10K
20K
4K
200 Typical
4.5 Typical
-100
-10
-100
-1.0
-1.5
2K
4K
10K
2K
200 Typical
4.5 Typical
BCV26
-40
-30
-10
-800
-500
-100
330
-55 to +150
UNIT
V
V
V
nA
nA
µ
A
µ
A
nA
V
V
C
BCV26
BCV46
E
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
BCV46
-80
-60
UNIT
V
V
V
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
BCV26
MIN. MAX.
-40
-30
-10
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA *
I
E
=10
µ
A
V
CB
= -30V
V
CB
= -60V
V
CB
=-30V,T
amb
=150
o
C
V
CB
=-60V,T
amb
=150
o
C
V
EB
=-4V
I
C
=-100mA,I
B
=-0.1mA*
I
C
=-100mA,I
B
=-0.1mA*
I
C
=-100
µΑ,
V
CE
=-1V
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-50mA, V
CE
=-5V
f = 20MHz
V
CB
=-10V, f=1MHz
Emitter Base
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
Output Capacitance
f
T
C
obo
MHz
pF
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
Periodic Sample Test Only.
3 - 21
ZETEX [ ZETEX SEMICONDUCTORS ]
