ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
Static
Group VI
Forward
Current Ratio
Group A
SYMBOL
h
FE
Min
Typ
Max
Typ
Min
Typ
Max
Typ
Group B
h
FE
Typ
Min
Typ
Max
Typ
Group C
h
FE
Typ.
Min
Typ
Max
Typ
Transition Frequency
Collector-Base
Capacitance
Emitter-Base
Capacitance
Noise Figure
f
T
C
obo
C
ib0
N
Typ
Typ
Max
Typ
Typ
Max
Typ
Max
2
10
2
10
200
200
270
420
500
800
BC846
BC847 BC848 BC849 BC850
BC846
BC848
BC850
BC847
BC849
UNIT CONDITIONS.
I
C
=2mA, V
CE
=5V
75
110
150
90
110
180
220
120
75
110
150
90
110
180
220
120
75
110
150
90
110
180
220
120
150
200
290
450
200
270
420
500
800
400
300
2.5
4.5
9
2
10
h
FE
I
C
=0.01mA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=100mA, V
CE
=5V
I
C
=0.01mA, V
CE
=5V
I
C
=2mA, V
CE
=5V
270
420
500
800
270
420
500
800
I
C
=100mA, V
CE
=5V
I
C
=0.01mA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=100mA, V
CE
=5V
MHz I
C
=10mA, V
CE
=5V
f=100MHz
pF
pF
pF
V
CB
=10V f=1MHz
V
EB
=0.5V f=1MHz
V
CE
= 5V, I
C
=200
µ
A,
R
G
=2k
Ω
, f=1kHz,
∆
f=200Hz
V
CE
= 5V, I
C
=200
µ
A,
R
G
=2k
Ω
, f=30Hz to
15kHz at -3dB
points
V
CE
= 5V, I
C
=200
µ
A,
R
G
=2k
Ω
, f=10Hz to
50Hz at -3dB
points
1.2
4
1.2
4
1
4
1
3
dB
dB
dB
dB
Equivalent Noise
Voltage
e
n
Max.
110
110
nV
Spice parameter data is available upon request for this device
ZETEX [ ZETEX SEMICONDUCTORS ]
