BC846
BC848
BC850
BC847
BC849
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
Group VI hFE
UNIT CONDITIONS.
IC=2mA, VCE=5V
BC846 BC847 BC848 BC849 BC850
Static
Forward
Current Ratio
Min 75
Typ 110 110 110
Max 150 150 150
75
75
Group A
Group B
Group C
hFE
hFE
hFE
Typ 90
90
90
IC=0.01mA, VCE=5V
IC=2mA, VCE=5V
Min 110 110 110
Typ 180 180 180
Max 220 220 220
Typ 120 120 120
IC=100mA, VCE=5V
IC=0.01mA, VCE=5V
IC=2mA, VCE=5V
Typ
150
Min
Typ
Max
200
290
450
Typ 200 200 200
IC=100mA, VCE=5V
IC=0.01mA, VCE=5V
IC=2mA, VCE=5V
Typ.
270 270 270 270
Min
Typ
Max
420 420 420 420
500 500 500 500
800 800 800 800
Typ
Typ
400
300
IC=100mA, VCE=5V
Transition Frequency
fT
MHz IC=10mA, VCE=5V
f=100MHz
Collector-Base
Capacitance
Cobo
Cib0
N
Typ
Max
2.5
4.5
pF
pF
VCB=10V f=1MHz
Emitter-Base
Capacitance
Typ
9
pF
VEB=0.5V f=1MHz
Noise Figure
Typ
Max 10
2
2
10
2
10
1.2
4
1
4
dB
dB
VCE = 5V, IC=200µA,
RG=2kΩ, f=1kHz,
∆f=200Hz
Typ
Max
1.2
4
1
3
dB
dB
VCE = 5V, IC=200µA,
RG=2kΩ, f=30Hz to
15kHz at -3dB
points
Equivalent Noise
Voltage
en
Max.
110 110 nV
VCE= 5V, IC=200µA,
RG=2kΩ, f=10Hz to
50Hz at -3dB
points
Spice parameter data is available upon request for this device
ZETEX [ ZETEX SEMICONDUCTORS ]
