SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 – MARCH 2001
PARTMARKING DETAILS
BC81716 –
6AZ
BC81725 –
6BZ
BC81740 –
6CZ
✪
BC817
C
B
E
COMPLEMENTARY TYPE
– BC807
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
I
BM
P
tot
T
j
:T
stg
50
45
5
1
500
100
200
330
SOT23
VALUE
UNIT
V
V
V
A
mA
mA
mA
mW
°C
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector Cut-Off
Current
SYMBOL
I
CBO
MIN.
TYP.
MAX. UNIT CONDITIONS.
0.1
5
10
700
1.2
µ
A
µ
A
µ
A
mV
V
V
CB
=20V, I
E
=0
V
CB
=20V, I
E
=0, T
amb
=150°C
V
EB
=5V, I
C
=0
I
C
=500mA, I
B
=50mA*
I
C
=500mA, V
CE
=1V*
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
BC81716
BC81725
BC81740
All bands
Transition Frequency
Output Capacitance
f
T
C
obo
V
CE(sat)
V
BE(on)
h
FE
100
160
250
40
200
5.0
250
400
600
I
C
=100mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
MHz
pF
I
C
=10mA, V
CE
=5V
f=35MHz
V
CB
=10V, f=1MHz
*Measured under pulsed conditions.
TBA
ZETEX [ ZETEX SEMICONDUCTORS ]
