SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 – MARCH 2001
PARTMARKING DETAILS
BC80716 –
5AZ
BC80725 –
5BZ
BC80740 –
5CZ
BC807
E
C
B
COMPLEMENTARY TYPE
BC817
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
I
BM
P
tot
T
j
:T
stg
VALUE
-50
-45
-5
-1
-500
-100
-200
330
-55 to +150
UNIT
V
V
V
A
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector Cut-Off
Current
SYMBOL
I
CBO
MIN.
TYP.
MAX. UNIT CONDITIONS.
-0.1
-0.5
-10
-700
-1.2
µ
A
µ
A
mV
V
V
CB
=-20V, I
E
=0
V
CB
=-20V, I
E
=0, T
amb
=150°C
V
EB
=-5V, I
C
=0
I
C
=-500mA, I
B
=-50mA*
I
C
=-500mA, V
CE
=-1V*
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
BC80716
BC80725
BC80740
All bands
Transition Frequency
Output Capacitance
f
T
C
obo
V
CE(sat)
V
BE(on)
h
FE
100
160
250
40
100
8.0
250
400
600
I
C
=-100mA, V
CE
=-1V*
I
C
=-100mA, V
CE
=-1V*
I
C
=-100mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
MHz
pF
I
C
=-10mA, V
CE
=-5V
f=35MHz
V
CB
=-10V f=1MHz
*Measured under pulsed conditions.
Spice parameter data is available upon request for these devices
tba
ZETEX [ ZETEX SEMICONDUCTORS ]
