NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 2 SEPT 93
FEATURES
* 100 Volt V
CEO
* Gain of 8k at I
C
=250mA
* P
tot
=1 Watt
BC372P
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
100
100
12
2
1
1
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
MIN.
100
100
12
100
100
1.1
2
10K
8K
100
25
3-17
MHz
pF
TYP.
MAX.
UNIT
V
V
V
nA
nA
V
V
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=100
µ
A, I
B
=0*
I
E
=10
µ
A, I
C
=0
V
CB
=80V, I
E
=0
V
EB
=10V, I
C
=0
I
C
=250mA, I
B
=0.25mA
I
C
=250mA, I
B
=0.25mA
I
C
=100mA, V
CE
=5V*
I
C
=250mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V
f=100MHz
V
CB
=10V, f=1MHz
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
V
BE(sat)
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Output Capacitance
f
T
C
obo
ZETEX [ ZETEX SEMICONDUCTORS ]
