SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
ISSUE 4 – JANUARY 1998
PIN CONFIGURATION
1
BBY40
2
1
PARTMARKING DETAIL
BBY40 – S2
3
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
P
tot
T
j
:T
stg
VALUE
330
-55 to +150
UNIT
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Reverse Breakdown
Voltage
Reverse current
SYMBOL
V
BR
MIN.
28.0
TYP.
MAX.
UNIT
V
CONDITIONS.
I
R
= 10µA
V
R
= 28V
V
R
= 28V, T
amb
= 60°C
I
R
10
1.0
nA
µA
TUNING CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Diode Capacitance
SYMBOL
C
d
MIN.
26.0
4.3
5.0
0.4
TYP.
MAX.
32.0
6.0
6.5
0.6
Ω
UNIT
pF
pF
CONDITIONS.
V
R
= 3V, f=1MHz
V
R
= 25V, f=1MHz
V
R
= 3V/25V, f=1MHz
f=200MHz at the value
of V
R
at which
C
d
=25pF
Capacitance Ratio
Series Resistance
C
d
/ C
d
r
d
Spice parameter data is available upon request for this device
ZETEX [ ZETEX SEMICONDUCTORS ]
