SOT23 PNP SILICON HIGH
SPEED SWITCHING DIODE
ISSUE 3 FEBRUARY 1996
PIN CONFIGURATION
BAS16
C
E
PARTMARKING DETAILS
BAS16 A6
!
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Repetative Reverse Voltage
Repetative Peak Forward Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
R
V
RRM
I
FRM
P
tot
T
j
:T
stg
VALUE
75
85
250
330
-55 to +150
UNIT
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Forward Voltage
SYMBOL
V
F
MIN. TYP.
MAX. UNIT CONDITIONS.
715
855
1000
1250
30
1
50
1.75
2
6
pF
ns
nA
mA
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=25V, T
j
=150°C
V
R
=75V
V
R
=75V, T
j
=150°C
Switched to
IF=10mA, t
r
=20ns
f=1MHz, V
R
=0
I
F
=10mA, I
RM
=10mA
R
L
=100
Ω
, I
rr
=1mA
Reverse Current
I
R
Forward Recovery
Voltage
Diode Capacitance
V
FR
C
d
Reverse Recovery Time t
rr
(1)
(2)
Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage
limited to 275V
ZETEX [ ZETEX SEMICONDUCTORS ]
