830 series
TUNING CHARACTERISTICS at Tamb = 25°C
PART
Capacitance (pF)
V
R
=2V, f=1MHz
MIN.
829A
829B
830A
830B
831A
831B
832A
832B
833A
833B
834A
834B
835A
835B
836A
836B
7.38
7.79
9.0
9.5
13.5
14.25
19.8
20.9
29.7
31.35
42.3
44.65
61.2
64.6
90.0
95.0
NOM.
8.2
8.2
10.0
10.0
15.0
15.0
22.0
22.0
33.0
33.0
47.0
47.0
68.0
68.0
100.0
100.0
MAX.
9.02
8.61
11.0
10.5
16.5
15.75
24.2
23.1
36.3
34.65
51.7
49.35
74.8
71.4
110.0
105.0
250
250
300
300
300
300
200
200
200
200
200
200
100
100
100
100
Min Q
V
R
=3V
f=50MHz
MIN.
4.3
4.3
4.5
4.5
4.5
4.5
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Capacitance Ratio
C
2
/ C
20
at f=1MHz
MAX.
5.8
5.8
6.0
6.0
6.0
6.0
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Forward current
Power dissipation at T
amb
= 25 C SOT23
Power dissipation at T
amb
= 25 C SOD323
Power dissipation at T
amb
= 25 C SOD523
Operating and storage temperature range
SYMBOL
I
F
P
tot
P
tot
P
tot
MAX
200
330
330
250
-55 to +150
UNIT
mA
mW
mW
mW
C
ELECTRICAL CHARACTERISTICS at Tamb = 25°C
PARAMETER
Reverse breakdown voltage
Reverse voltage leakage
Temperature coefficient of capacitance
CONDITIONS
I
R
= 10uA
V
R
= 20V
V
R
= 3V, f = 1MHz
MIN.
25
0.2
300
20
400
TYP.
MAX.
UNIT
V
nA
ppCm/ C
ISSUE 6 - JANUARY 2002
2
ZETEX [ ZETEX SEMICONDUCTORS ]
