FCX705
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
-140
-120
-10
-100
-10
TYP.
MAX. UNIT
V
V
V
nA
µA
CONDITIONS.
I
C
= -100 A
I
C
= -10mA*
I
E
= -100 A
V
CB
= -10V
V
CB
= -120V
Tamb = 100°C
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
I
EBO
I
CES
V
CE(sat)
-0.1
-10
-1.3
-2.5
V
BE(sat)
V
BE(on)
h
FE
3K
3K
3K
2K
160
90
15
0.6
0.8
-1.8
-1.7
µA
µA
V
V
V
V
V
EB
= -8V
V
CES
= -120V
I
C
= -1A, I
B
= -1mA*
I
C
= -2A, I
B
= -2mA*
I
C
= -1A, I
B
= -1mA*
I
C
= -1A, V
CE
= -5V*
I
C
=
I
C
=
I
C
=
I
C
=
MHz
pF
pF
µs
µs
-10mA, V
CE
= -5V*
-100mA, V
CE
= -5V*
-1A, V
CE
= -5V*
-2A, V
CE
= -5V*
30K
Transition Frequency
Input Capacitance
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
ibo
C
obo
t
(on)
t
(off)
I
C
= -100mA, V
CE
= -10V
f= 20MHz
V
CB
= -500mV, f= 1MHz
V
CB
= -10V, f= 1MHz
I
C
= -500mA, V
CE
= -10V
I
B1
=I
B2
= -0.5mA
I
C
= -500mA, V
CE
= -10V
I
B1
=I
B2
= -0.5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
Nb. Spice parameter data is available upon request for this device.
ISSUE 4 - DECEMBER 2002
3
SEMICONDUCTORS
ZETEX [ ZETEX SEMICONDUCTORS ]
