FMMT497
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base
breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
turn on voltage
Static forward current
transfer ratio
Symbol
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
100
80
20
75
5
53
126
2.58
228
2%.
Min.
300
300
5
Typ.
Max
.
Unit
V
V
V
Conditions
I
C
= 100 A
I
C
= 10mA
(*)
I
E
= 100 A
V
CB
= 250V
V
CES
= 250V
V
EB
= 4V
I
C
= 100mA, I
B
= 10mA
I
C
= 250mA, I
B
= 25mA
I
C
= 250mA, I
B
= 25mA
I
C
= 250mA, V
CE
= 10V
I
C
= 1mA, V
CE
= 10V
100
100
100
0.2
0.3
1.0
1.0
nA
nA
nA
V
V
V
V
300
I
C
= 100mA, V
CE
= 10V
(*)
I
C
= 250mA, V
CE
= 10V
(*)
MHz
pF
ns
ns
s
ns
I
C
= 50mA, V
CE
= 10V
f = 100MHz
V
CB
= 10V, f = 1MHz
V
CC
= 100V, I
C
= 100mA,
Ib1 = -Ib2 = 10mA
Transition frequency
output capacitance
Switching performance
f
T
C
obo
td
tr
ts
tf
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle
© Zetex Semiconductors plc 2006
ZETEX [ ZETEX SEMICONDUCTORS ]
