SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
FEATURES
* 60 Volt V
CEO
2N7002
S
D
PARTMARKING DETAIL – 702
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
60
115
800
±
40
330
-55 to +150
SOT23
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Voltage (1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Time (2)(3)
Turn-Off Time (2)(3)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
(on)
t
(off)
80
50
25
5
20
20
500
3.75
375
7.5
7.5
60
1
2.5
10
1
500
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
mA
V
mV
Ω
Ω
mS
pF
pF
pF
ns
ns
V
DD
≈30V,
I
D
=200mA
R
g
=25Ω, R
L
=150Ω
V
DS
=25V, V
GS
=0V, f=1MHz
I
D
=10µA, V
GS
=0V
I
D
=250mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=48V, V
GS
=0V
V
DS
=48V, V
GS
=0V, T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=50mA
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=50mA
V
DS
=25V, I
D
=500mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3-2
ZETEX [ ZETEX SEMICONDUCTORS ]
