NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 80 Volt V
CEO
* Gain of 100 at I
C
= 350 mA
* P
tot
=1 Watt
2N6731
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
= 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
100
80
5
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
100
80
5
0.1
10
0.35
1.0
100
100
50
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=1mA, I
C
=0
V
CB
=80V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=350mA, I
B
=35mA*
IC=350mA, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=350mA, V
CE
=2V*
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(on)
V
V
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Collector-Base
Capacitance
f
T
C
CB
300
500
20
MHz
pF
I
C
=200mA, V
CE
=5V
f=20MHz
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3-10
ZETEX [ ZETEX SEMICONDUCTORS ]
