MH88612B
AC Electrical Characteristics
Characteristics
1
2
3
4
5
6
7
Ringing Voltage (rms)
Ringer Equivalence Number
Ring Trip Detect time
Input AC Impedance 2-wire
Input Impedance at V
R
Output Impedance at Vx
Gain 2-wire to Vx
Gain relative to Gain @ 1kHz
8
Gain VR to 2-wire
Gain relative to Gain @ 1kHz
9
2-wire Return Loss over
300-3400Hz
Transhybrid Loss
Longitudinal to Metallic
Balance over 300-3400 Hz
Total Harmonic Distortion
at VX
at Tip and Ring
13
14
15
Common Mode Rejection
Ratio 2-wire to Vx
Idle channel Noise
Power supply rejection ratio
V
CC
V
EE
V
BAT
CMRR
Nc
PSRR
26
26
26
40
THD
RL
Sym
V
RING
REN
200
Zin
Data Sheet
Min
17
Typ
‡
Max
90
25
3
Units
V
rms
Hz
ms
Ω
kΩ
Test Conditions
Superimposed on V
BAT
=
-48V
Cap = 1uF
600
100
-1.3
-0.15
-1.3
-0.15
20
30
-1.0
10
-1.0
-0.7
+0.15
-0.7
+0.15
Ω
dB
Input 3dBm, 1kHz across
Tip and Ring
300-3400 Hz
Input 1.0 Vrms 1kHz at V
R
Z
Load
= 600Ω
300 - 3400 Hz
Input 0.5 Vrms
,
1kHz
across Tip and Ring,
Z
Load
= 600Ω
Input 0.5 Vrms
,
1kHz at V
R
Z
Load
= 600Ω
Input 0.5 Vrms
Input 3dBm, 1 kHz
across Tip and Ring,
Input 1.0 Vrms 1kHz at V
R
Input 0.5Vrms, 1kHz
C @ & VX Message
1 V
PP
ripple, 1kHz on
VCC/V
EE
/V
BAT
,measure at
VX and across Tip & Ring
dB
dB
dB
10
11
12
THL
20
50
30
55
0.1
1.0
dB
dB
%
0.1
50
1.0
%
dB
14
dBrnC
dB
dB
dB
‡ Typical figures are at 25°C with nominal
±
5V supplies and are for design aid only.
8
SEMICMF.019
ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
