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MAS5104FB 参数 Datasheet PDF下载

MAS5104FB图片预览
型号: MAS5104FB
PDF下载: 下载PDF文件 查看货源
内容描述: 辐射HARD 4096× 1位的静态RAM [RADIATION HARD 4096 x 1 BIT STATIC RAM]
分类和应用: 存储静态存储器
文件页数/大小: 12 页 / 262 K
品牌: ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
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MA5104
T
AVAVW
ADDRESS
T
AVWH
T
AVWL
(4)
T
WHAV (3)
T
WLWH (2)
WE
T
AXQX
T
WLQZ
T
ELWL
(7)
T
WLQH
(5)
(6)
DATA OUT
HIGH
IMPEDANCE
T
DVWH
DATA IN
DATA VALID
T
WHDX
T
ELWH
CS
1.
WE
must be high during all address transitions.
2. A write occurs during the overlap (T
WLWH
) of a low
CS,
a high CE and a low
WE.
3. T
WHAV
is measured from either
CS
or
WE
going high or CE going low, whichever is the earlier, to the end
of the write cycle.
4. If the
CS
low transition occurs simultaneously with, or after, the
WE
low transition, the output remains in
the high impedance state.
5. DATA OUT is the write data of the current cycle, if selected.
6. DATA OUT is the read data of the next address,if selected.
7. T
ELWL
must be met to prevent memory corruption.
Figure 12: Write Cycle
6