MA2910
DC CHARACTERISTICS AND RATINGS
Note: Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functional operation of the device at these conditions, or at
any other condition above those indicated in the operations
section of this specification, is not implied. Exposure to
absolute maximum rating conditions for extended periods
may affect device reliability.
Parameter
Min
-0.5
-0.3
-20
-55
-65
Max
7
Units
V
Supply Voltage
Input Voltage
VDD+0.3
+20
V
Current Through Any Pin
Operating Temperature
Storage Temperature
mA
°C
125
150
°C
Figure 24: Absolute Maximum Ratings
Subgroup
Definition
1
2
Static characteristics specified in Figure 26 at +25°C
Static characteristics specified in Figure 26 at +125°C
Static characteristics specified in Figure 26 at -55°C
3
9
Switching characteristics specified in Figures 27 to 29 at +25°C
Switching characteristics specified in Figures 27 to 29 at +125°C
Switching characteristics specified in Figures 27 to 29 at -55°C
10
11
Figure 25: Definition of Subgroups
Total dose radiation not exceeding
3x105 Rad (Si)
Symbol Parameter
Conditions
Units
Min.
Typ.
Max .
VDD
VIH
VIL
Supply voltage
-
4 5
2.0
-
5.0
5 5
-
V
Input high voltage
-
-
-
-
-
-
V
Input low voltage
-
0 8
-
V
VOH
VOL
IIN
Output high voltage
Output low voltage
IOH = -2mA
IOL = 5mA
2.4
-
V
0.4
±10
V
Input leakage current (Note 1)
VDD = 5.5V,
-
µA
VIN = VSS or VDD
IOZ
IDD
Tristate leakage current (Note 1) VDD = 5.5V,
VIN = VSS Or VDD
-
-
-
±50
10
µA
Power supply current
Static, VDD = 5.5V
0.1
mA
Mil-Std-883, method 5005, subgroups 1, 2, 3
VDD = 5V ±10%, over full operating temperature range.
Note 1: Worst case at TA = +125°C, guaranteed at TA = -55°C. 300K Rad(Si) values at higher radiation levels are available on
request.
Figure 26: Operating Electrical Characteristics
11
ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
