MA6116 & MA6216
RADIATION TOLERANCE
Total Dose (Function to specification)*
Transient Upset (Stored data loss)
Transient Upset (Survivability)
1x105 Rad(Si)
5x1010 Rad(Si)/sec
>1x1012 Rad(Si)/sec
Total Dose Radiation Testing
For product procured to guaranteed total dose radiation
levels, each wafer lot will be approved when all sample
devices from each lot pass the total dose radiation test.
The sample devices will be subjected to the total dose
radiation level (Cobalt-60 Source), defined by the ordering
code, and must continue to meet the electrical parameters
specified in the data sheet. Electrical tests, pre and post
irradiation, will be read and recorded.
Neutron Hardness (Function to specification)
Single Event Upset**
>1x1015 n/cm2
3.4x10-9 Errors/bit day
Not possible
Latch Up
* Other total dose radiation levels available on request
** Worst case galactic cosmic ray upset - interplanetary/high altitude orbit
GEC Plessey Semiconductors can provide radiation
testing compliant with MIL-STD-883 test method 1019,
Ionizing Radiation (Total Dose).
Figure 17: Radiation Hardness Parameters
SINGLE EVENT UPSET CHARACTERISTICS
UPSET BIT
CROSS-SECTION
(cm2/bit)
Ion LET (MeV.cm2/mg)
Figure 18: Typical Per-Bit Upset Cross-Section vs Ion LET
11
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