MA6116 & MA6216
AC CHARACTERISTICS
Conditions of Test for Tables 5 and 6:
1. Input pulse = V
SS
to 3.0V.
2. Times measurement reference level = 1.5V.
3. Output load 1TTL gate and C
L
= 60pF.
4. Transition is measured at
±500mV
from steady state.
5. This parameter is sampled and not 100% tested.
Notes for Tables 6 and 7:
Characteristics apply to pre-radiation at T
A
= -55°C to +125°C with V
DD
= 5V±10% and to post 100k Rad(Si) total dose radiation
at T
A
= 25°C with V
DD
= 5V
±10%.
GROUP A SUBGROUPS 9, 10, 11.
Symbol
T
AVAVR
T
AVQV
T
ELQV
T
ELQX
(4,5)
T
GLQV
T
GLQX
(4,5)
T
EHQZ
(4,5)
T
GHQZ
(4,5)
T
AXQX
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select to Output in Low Z
Output Enable to Output Valid
Output Enable to Output in Low Z
Chip Deselect to Output in High Z
Chip Disable to Output in High Z
Output Hold from Address Change
MA6116
Min Max
150
-
-
10
-
10
0
0
10
-
130
140
-
80
-
60
60
-
MA6216
Min Max
100
-
-
10
-
10
0
0
10
-
95
100
-
60
-
50
50
-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Figure 6: Read Cycle AC Electrical Characteristics
Symbol
T
AVAVW
T
ELWH
T
AVWH
T
AVWL
T
WLWH
T
WHAV
T
WLQZ
(4,5)
T
DVWH
T
WHDX
T
WHQX
(4,5)
T
ELWL
Parameter
Write Cycle Tlme
Chip Selection to End of Write
Address Valid to End of Write
Address Set Up Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End to Write
Chip Selection to Write Low
MA6116
Min Max
150
85
80
20
50
5
0
30
10
5
25
-
-
-
-
-
-
60
-
-
-
-
MA6216
Min Max
100
75
70
10
40
5
0
25
10
5
25
-
-
-
-
-
-
50
-
-
-
-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Figure 7: Write Cycle AC Electrical Characteristics
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
l
= 0V
V
O
= 0V
Min.
-
-
Typ.
6
5
Max.
10
7
Units
pF
pF
Note: T
A
= 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.
Figure 8: Capacitance
3
ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
