MA6116 & MA6216
MARCH 1995
DS3582-3.1
MA6116 & MA6216
RADIATION HARD 2048 x 8 BIT STATIC RAM
The MA6116 16k Static RAM is configured as 2048 x 8 bits and
manufactured using CMOS-SOS high performance, radiation hard,
3µm technology. The MA6216 is manufactured using 2.5µm technology
resulting in faster performance.
The design uses a 6 transistor cell and has full static operation with
no clock or timing strobe required. Address input buffers are deselected
when chip select is in the HIGH state.
Operation Mode
Read
Write
Write
Standby
CS
L
L
L
H
OE WE
L
H
L
X
H
L
L
X
I/O
D OUT
D IN
D IN
High Z
ISB2
ISB1
Power
FEATURES
s
3µm CMOS-SOS Technology
s
Latch-up Free
s
Fast Access Time 110ns (MA6116) and 85ns
(MA6216) Typical
s
Total Dose 10
6
Rad(Si)
s
Transient Upset >10
10
Rad(Si)/sec
s
SEU <10
-10
Errors/bitday
s
Single 5V Supply
s
Three State Output
s
Low Standby Current 100µA Typical
s
-55°C to +125°C Operation
s
TTL and CMOS Compatible Inputs
s
Fully Static Operation
Figure 1: Truth Table
Figure 2: Block Diagram
1
ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
