MA5114
MARCH 1995
DS3581-3.1
MA5114
RADIATION HARD 1024 x 4 BIT STATIC RAM
The MA5114 4k Static RAM is configured as 1024 x 4 bits and
manufactured using CMOS-SOS high performance, radiation hard,
3µm technology.
The design uses a 6 transistor cell and has full static operation with
no clock or timing strobe required. Address input buffers are deselected
when Chip Select is in the HIGH state.
Operation Mode
Read
Write
Standby
CS
L
L
H
WE
H
L
X
I/O
D OUT
D IN
High Z
ISB2
Power
ISB1
FEATURES
s
3µm CMOS-SOS Technology
s
Latch-up Free
s
Fast Access Time 90ns Typical
s
Total Dose 10
6
Rad(Si)
s
Transient Upset >10
10
Rad(Si)/sec
s
SEU <10
-10
Errors/bitday
s
Single 5V Supply
s
Three State Output
s
Low Standby Current 50µA Typical
s
-55°C to +125°C Operation
s
All Inputs and Outputs Fully TTL or CMOS
Compatible
s
Fully Static Operation
s
Data Retention at 2V Supply
Figure 1: Truth Table
Figure 2: Block Diagram
1
ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
