MA6116 & MA6216
AC CHARACTERISTICS
Conditions of Test for Tables 5 and 6:
1. Input pulse = VSS to 3.0V.
2. Times measurement reference level = 1.5V.
3. Output load 1TTL gate and CL = 60pF.
4. Transition is measured at ±500mV from steady state.
5. This parameter is sampled and not 100% tested.
Notes for Tables 6 and 7:
Characteristics apply to pre-radiation at TA = -55°C to +125°C with VDD = 5V±10% and to post 100k Rad(Si) total dose radiation
at TA = 25°C with VDD = 5V ±10%. GROUP A SUBGROUPS 9, 10, 11.
MA6116
MA6216
Symbol
Parameter
Min Max Min Max Units
TAVAVR
TAVQV
Read Cycle Time
150
-
-
130
140
-
100
-
-
95
100
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
TELQV
Chip Select Access Time
-
-
TELQX (4,5)
TGLQV
Chip Select to Output in Low Z
Output Enable to Output Valid
Output Enable to Output in Low Z
Chip Deselect to Output in High Z
Chip Disable to Output in High Z
Output Hold from Address Change
10
-
10
-
80
-
60
-
TGLQX (4,5)
TEHQZ (4,5)
10
0
10
0
60
60
-
50
50
-
T
GHQZ (4,5)
TAXQX
0
0
10
10
Figure 6: Read Cycle AC Electrical Characteristics
MA6116
MA6216
Symbol
Parameter
Min Max Min Max Units
TAVAVW
TELWH
Write Cycle Tlme
150
85
80
20
50
5
-
-
100
75
70
10
40
5
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Selection to End of Write
Address Valid to End of Write
Address Set Up Time
TAVWH
-
-
TAVWL
-
-
TWLWH
Write Pulse Width
-
-
TWHAV
Write Recovery Time
-
-
TWLQZ (4,5)
TDVWH
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End to Write
Chip Selection to Write Low
0
60
-
0
50
-
30
10
5
25
10
5
TWHDX
-
-
TWHQX (4,5)
TELWL
-
-
25
-
25
-
Figure 7: Write Cycle AC Electrical Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
CIN
Input Capacitance
Output Capacitance
Vl = 0V
-
-
6
5
10
7
pF
pF
COUT
VO = 0V
Note: TA = 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.
Figure 8: Capacitance
3
ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
