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MAL6116LEXXX 参数 Datasheet PDF下载

MAL6116LEXXX图片预览
型号: MAL6116LEXXX
PDF下载: 下载PDF文件 查看货源
内容描述: [SRAM,]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 209 K
品牌: ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
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MA6116 & MA6216
T
AVAVW
ADDRESS
T
AVWH
T
AVWL
(4)
T
WHAV (3)
T
WLWH (2)
WE
T
AXQX
T
WLQZ
T
ELWL
(8)
(5)
T
WLQH
(6)
(7)
DATA OUT
HIGH
IMPEDANCE
T
DVWH
DATA IN
DATA VALID
T
WHDX
T
ELWH
CS
1.
WE
must be high during all address transitions.
2. A write occurs during the overlap (T
WLWH
) of a low
CS
and a low
WE.
3. T
WHAV
is measured from either
CS
or
WE
going high, whichever is the earlier, to the end of the write cycle.
4. If the
CS
low transition occurs simultaneously with, or after, the
WE
low transition, the output remains in the
high impedance state.
5. DATA OUT is in the active state, so DATA IN must not be in opposing state.
6. DATA OUT is the write data of the current cycle, if selected.
7. DATA OUT is the read data of the next address, if selected.
8. T
ELWL
must be met to prevent memory corruption.
9.
OE
is low. (If
OE
is high then DATA OUT remains in the high impedance state throughout the cycle).
Figure 12: Write Cycle
6