MA6116 & MA6216
CHARACTERISTICS AND RATINGS
Symbol
V
DD
V
I
T
A
T
S
Parameter
Supply Voltage
Input Voltage
Operating Temperature
Storage Temperature
Min.
-0.5
-0.3
-55
-65
Max.
7
V
DD
+0.3
125
150
Units
V
V
°C
°C
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functlonal operation of the device at these condltions,
or at any other condition above those indicated in the
operations section of this specification, is not Implied
Exposure to absolute maxlmum rating conditions for
extended perlods may affect device reliability.
Figure 3: Absolute Maximum Ratings
Notes for Tables 4 and 5:
1. Characteristics apply to pre radiation at T
A
= -55°C to +125°C with V
DD
= 5V
±10%
and to post 100k Rad(Si) total dose
radiation at T
A
= 25°C with V
DD
= 5V
±10%
(characteristics at higher radiation levels available on request).
2. Worst case at T
A
= +125°C, guaranteed but not tested at T
A
= -55°C.
3. GROUP A SUBGROUPS 1, 2, 3.
Symbol
V
DD
V
lH
V
lL
V
OH
V
OL
I
LI
I
LO
I
DD
I
SB1
I
SB2
Parameter
Supply voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current (note 2)
Output Leakage Current (note 2)
Power Supply Current
Selected Supply Current
Standby Supply Current
Conditions
-
-
-
I
OH1
= -1mA
I
OL
= 4mA
All inputs except
CS
Output disabled, V
OUT
= V
SS
or V
DD
f
RC
= 1MHz,
CS
= 50% mark:space
All inputs = V
DD
-0.2V except
CS
= V
SS
+0.2V
Chip disabled,
CS
= V
DD
-0.2V
Min.
4.5
V
DD
/2
V
SS
2.4
-
-
-
-
-
-
Typ.
5.0
-
-
-
-
-
-
20
50
0.1
Max.
5.5
V
DD
0.8
-
0.4
±10
±20
40
70
5
Units
V
V
V
V
V
µA
µA
mA
mA
mA
Figure 4: Electrical Characteristics
Symbol
V
DR
I
DDR
Parameter
V
CC
for Data Retention
Data Retention Current
Conditions
CS
= V
DR
CS
= V
DR
, V
DR
= 2.0V
Min.
2.0
-
Typ.
-
50
Max.
-
3000
Units
V
µA
Figure 5: Data Retention Characteristics
2
ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
