APRIL 1995
MA5104
DS3580-3.2
MA5104
RADIATION HARD 4096 x 1 BIT STATIC RAM
The MA5104 4k Static RAM is configured as 4096 x 1 bits and
manufactured using CMOS-SOS high performance, radiation hard,
3µm technology.
The device has separate input and output terminals controlled by
Chip Select and Write Enable. The design uses a 6 transistor cell and
has full static operation with no clock or timing strobe required.
Address input buffers are deselected when Chip Select is in the HIGH
state.
FEATURES
■ 3µm CMOS-SOS Technology
■ Latch-up Free
■ Fast Access Time 90ns Typical
■ Total Dose 106 Rad(Si)
■ Transient Upset >1010 Rad(Si)/sec
■ SEU <10-10 Errors/bitday
■ Single 5V Supply
Operation Mode CS WE
I/O
Power
Read
Write
L
L
H
L
D OUT
D IN
ISB1
■ Three State Output
■ Low Standby Current 10µA Typical
■ -55°C to +125°C Operation
Standby
H
X
High Z
ISB2
■ All Inputs and Outputs Fully TTL or CMOS
Figure 1: Truth Table
Compatible
■ Fully Static Operation
Figure 2: Block Diagram
1
ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
