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MAC5104CDXXX 参数 Datasheet PDF下载

MAC5104CDXXX图片预览
型号: MAC5104CDXXX
PDF下载: 下载PDF文件 查看货源
内容描述: [SRAM,]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 170 K
品牌: ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
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MA5104  
AC CHARACTERISTICS  
Conditions of Test for Tables 5 and 6:  
1. Input pulse = VSS to 3.0V.  
2. Times measurement reference level = 1.5V.  
3. Transition is measured at ±500mV from steady state.  
4. This parameter is sampled and not 100% tested.  
Notes for Tables 6 and 7:  
Characteristics apply to pre-radiation at TA = -55°C to +125°C with VDD = 5V±10% and to post 100k Rad(Si) total dose radiation  
at TA = 25°C with VDD = 5V ±10%. GROUP A SUBGROUPS 9, 10, 11.  
Symbol  
Parameter  
Min Max  
Units  
TAVAVR  
TAVQV  
Read Cycle Time  
135  
-
-
135  
135  
-
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
TELQV  
Chip Select to Output Valid  
Chip Select to Output Active  
Chip Select to Output Tri State  
Output Hold from Address Change  
-
TELQX (4)  
10  
10  
10  
T
ELQZ (4)  
TAXQX  
50  
-
Figure 6: Read Cycle AC Electrical Characteristics  
Symbol  
Parameter  
Min Max  
Units  
TAVAVW  
TAVWL  
TWLWH  
TWHAV  
Write Cycle Tlme  
135  
10  
50  
5
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Set Up Time  
Write Pulse Width  
-
Write Recovery Time  
-
TDVWH  
Data Set Up Time  
35  
5
-
TNHDX  
Data Hold Time  
-
TWLQZ (4)  
TELWL  
Write Enable to Output Tri State  
Chip Selection to Write Low  
Chip Selection to End of Write  
Address Valid to End of Write  
Output Active from End to Write  
10  
25  
85  
80  
5
50  
-
TELWH  
-
TAVWH  
-
TWHQX (4)  
-
Figure 7: Write Cycle AC Electrical Characteristics  
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Units  
CIN  
Input Capacitance  
Output Capacitance  
Vl = 0V  
-
-
6
8
10  
12  
pF  
pF  
COUT  
VO = 0V  
Note: TA = 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.  
Figure 8: Capacitance  
3