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MAC5104FLXXX 参数 Datasheet PDF下载

MAC5104FLXXX图片预览
型号: MAC5104FLXXX
PDF下载: 下载PDF文件 查看货源
内容描述: [SRAM,]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 170 K
品牌: ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
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MA5104  
RADIATION TOLERANCE  
Total Dose (Function to specification)*  
Transient Upset (Stored data loss)  
Transient Upset (Survivability)  
Neutron Hardness (Function to specification)  
Single Event Upset**  
1x105 Rad(Si)  
5x1010 Rad(Si)/sec  
>1x1012 Rad(Si)/sec  
>1x1015 n/cm2  
Total Dose Radiation Testing  
For product procured to guaranteed total dose radiation  
levels, each wafer lot will be approved when all sample  
devices from each lot pass the total dose radiation test.  
The sample devices will be subjected to the total dose  
radiation level (Cobalt-60 Source), defined by the ordering  
code, and must continue to meet the electrical parameters  
specified in the data sheet. Electrical tests, pre and post  
irradiation, will be read and recorded.  
3.4x10-9 Errors/bit day  
Not possible  
Latch Up  
* Other total dose radiation levels available on request  
** Worst case galactic cosmic ray upset - interplanetary/high altitude orbit  
GEC Plessey Semiconductors can provide radiation  
testing compliant with MIL-STD-883 test method 1019,  
Ionizing Radiation (Total Dose).  
Figure 16: Radiation Hardness Parameters  
SINGLE EVENT UPSET CHARACTERISTICS  
UPSET BIT  
CROSS-SECTION  
(cm2/bit)  
Ion LET (MeV.cm2/mg)  
Figure 17: Typical Per-Bit Upset Cross-Section vs Ion LET  
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