APRIL 1995
MA5104
DS3580-3.2
MA5104
RADIATION HARD 4096 x 1 BIT STATIC RAM
The MA5104 4k Static RAM is configured as 4096 x 1 bits and
manufactured using CMOS-SOS high performance, radiation hard,
3µm technology.
The device has separate input and output terminals controlled by
Chip Select and Write Enable. The design uses a 6 transistor cell and
has full static operation with no clock or timing strobe required.
Address input buffers are deselected when Chip Select is in the HIGH
state.
Operation Mode
Read
Write
Standby
CS
L
L
H
WE
H
L
X
I/O
D OUT
D IN
High Z
ISB2
Power
ISB1
FEATURES
s
3µm CMOS-SOS Technology
s
Latch-up Free
s
Fast Access Time 90ns Typical
s
Total Dose 10
6
Rad(Si)
s
Transient Upset >10
10
Rad(Si)/sec
s
SEU <10
-10
Errors/bitday
s
Single 5V Supply
s
Three State Output
s
Low Standby Current 10µA Typical
s
-55°C to +125°C Operation
s
All Inputs and Outputs Fully TTL or CMOS
Compatible
s
Fully Static Operation
Figure 1: Truth Table
Figure 2: Block Diagram
1
ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
