LE75183DDSCT 参数 Datasheet PDF下载

Le75183

ELECTRICAL CHARACTERISTICS

Summary of Assumptions

Data Sheet

Unless otherwise noted, the test conditions are defined by the Le75183 device application circuit shown in

with:

V

BAT

=

−48

V, V

DD

= 5.0 V.

Supply Currents and Power Dissipation

I

DD

mA

Operational State

All OFF

Power Ringing or

Access

Idle/Talk

Condition

VDD=5V, VBAT=-48V

VDD=5V, VBAT=-48V

VDD=5V, VBAT=-48V

Min.

—

—

—

Typ

0.760

0.850

0.860

Max

1.1

2.1

1.3

Min.

—

—

—

I

BAT

µ

A

Typ

4

4

4

Max

10

10

10

LCAS Device Power mW

Min.

—

—

—

Typ

3.8

4.4

4.5

Max

6

11

7

SPECIFICATIONS

Device Specifications

Table 1. Test-In Switches, 1 and 2

Parameter

OFF-state Leakage Current:

+25°C

+85°C

–40°C

ON-resistance (SW1, SW2):

+25 °C

+85 °C

–40 °C

Isolation:

+25 °C

+85 °C

–40 °C

dV/dt Sensitivity

*

Vswitch (both poles) = ±320 V, Logic inputs = Gnd

Vswitch (both poles) = ±330 V, Logic inputs = Gnd

Vswitch (both poles) = ±310 V, Logic inputs = Gnd

—

Iswitch

Iswitch

Iswitch

—

—

—

—

—

—

—

—

200

1

1

1

—

V/µs

µA

I

SWITCH

(on) = ±5 mA, ±10 mA

I

SWITCH

(on) = ±5 mA, ±10 mA

I

SWITCH

(on) = ±5 mA, ±10 mA

∆

V

ON

∆

V

ON

∆

V

ON

—

—

—

49

—

37

—

77

—

Ω

Vswitch (differential) = –320 V to Gnd

Vswitch (differential) = –60 V to +260 V

Vswitch (differential) = –330 V to Gnd

Vswitch (differential) = –60 V to +270 V

Vswitch (differential) = –310 V to Gnd

Vswitch (differential) = –60 V to +250 V

I

SWITCH

I

SWITCH

I

SWITCH

—

—

—

—

—

—

1

1

1

µA

Test Condition

Measure

Min

Typ

Max

Unit

*Applied voltage is 100 Vp-p square wave at 100 Hz. Not tested in production.

8

Zarlink Semiconductor Inc.