L8583D Line Card Access Switch
Data Sheet
October 2002
Electrical Characteristics
(continued)
Table 6. Break Switches, 3 and 4
Parameter
Off-state Leakage Current:
+25 °C
+85 °C
–40 °C
On-resistance:
+25 °C
+85 °C
–40 °C
On-resistance Match
On-state Voltage*
dc Current Limit:
+85 °C
–40 °C
Dynamic Current Limit
(t = <0.5 µs)
Test Condition
Vswitch (differential) = –320 V to Gnd
Vswitch (differential) = –60 V to +260 V
Vswitch (differential) = –330 V to Gnd
Vswitch (differential) = –60 V to +270 V
Vswitch (differential) = –310 V to Gnd
Vswitch (differential) = –60 V to +250 V
T
LINE
= ±10 mA, ±40 mA, T
BAT
= –2 V
T
LINE
= ±10 mA, ±40 mA, T
BAT
= –2 V
T
LINE
= ±10 mA, ±40 mA, T
BAT
= –2 V
Per on-resistance test
condition of SW3, SW4
Iswitch = I
LIMIT
at 50 Hz/60 Hz
Vswitch (on) = ±10 V
Vswitch (on) = ±10 V
Break switches in on state; ringing access
switches off; apply ±1000 V at 10/1000 µs
pulse; appropriate secondary protection in
place
Vswitch (both poles) = ±320 V,
logic inputs = Gnd
Vswitch (both poles) = ±330 V,
logic inputs = Gnd
Vswitch (both poles) = ±310 V,
logic inputs = Gnd
—
Measure
Iswitch
Iswitch
Iswitch
Min Typ Max Unit
—
—
—
—
—
—
1
1
1
µA
µA
µA
∆
V
ON
∆
V
ON
∆
V
ON
Magnitude
R
ON
SW3 – R
ON
SW4
V
ON
Iswitch
Iswitch
Iswitch
—
—
—
—
—
80
—
—
21.5
—
16
0.2
—
—
—
2.5
—
31
—
1.0
220
Ω
Ω
Ω
Ω
V
— mA
250 mA
—
A
Isolation:
+25 °C
+85 °C
–40 °C
dV/dt Sensitivity
†
Iswitch
Iswitch
Iswitch
—
—
—
—
—
—
—
—
200
1
1
1
µA
µA
µA
— V/µs
* This parameter is not tested in production. Choice of secondary protector should ensure this rating is not exceeded.
† Applied voltage is 100 Vp-p square wave at 100 Hz.
6
ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
