DATA SHEET
SEMICONDUCTOR
GBU10A THRU GBU10M
10 Amp Single Phase
Glass Passivated
Bridge Rectifiers 50 to 1000 Volts
GBU
Unit:inch(mm)
FEATURES
0.140 (3.56)
0.130 (3.30)
0.880 (22.3)
0.860 (21.8)
0.020 R (TYP.)
‧ Plastic Material has Underwriters Laboratory
‧ Glass Passivated Chip junction
0.125 (3.2) x 45o
CHAMFER
9o
TYP.
0.160 (4.1)
0.140 (3.5)
0.310 (7.9)
0.290 (7.4)
‧ High Surge Overload Rating
0.740 (18.8)
0.720 (18.3)
‧ Reliable Low Cost Construction Utilizing Molded Plastic Technique
‧ High temperature soldering : 260OC / 10 seconds at terminals
‧ Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
0.075
0.085 (2.16)
0.065 (1.65)
(2.03)
(1.52)
0.080
0.060
(1.9)
R.
5o
TYP.
0.085 (2.16)
0.075 (1.90)
0.710 (18.0)
0.690 (17.5)
Maximum Ratings
0.100 (2.54)
0.085 (2.16)
0.050 (1.27)
0.040 (1.02)
‧ Operating Temperature: -55℃ to +150℃
‧ Storage Temperature: -55℃ to +150℃
‧ Typical Thermal Resistance:2.2℃/W Junction to Case(Heatsink)
0.022 (0.56)
0.018 (0.46)
(4.83)
(5.33)
0.080 (2.03)
0.065 (1.65)
0.190
0.210
Maximum
Maximum DC
MCC
Recurrent
Peak Reverse
Voltage
50V
Maximum
Dimensions in inches and (millimeters)
Blocking
Voltage
Part Number
RMS Voltage
GBU10A
GBU10B
GBU10D
GBU10G
GBU10J
GBU10K
GBU10M
35V
70V
50V
100V
200V
400V
600V
800V
1000V
100V
200V
140V
280V
420V
560V
700V
400V
600V
800V
1000V
Electrical Characteristics @ 25℃ Unless Otherwise Specified
Maximum Average
Forward Current
(with heatsink Note1)
Peak Forward Surge
Current
IF(AV)
10 A
TA = 100℃
IFSM
VF
200A
1.1V
8.3ms, half sine
Maximum
At 5.0/7.5/12.5/
17.5A DC
Instantaneous
Forward Voltage
Maximum DC
IR
5.0uA
TA = 25℃
Reverse Current At
Rated DC Blocking
Voltage
500uA
TA = 125℃
Typical Junction
Capacitance
CJ
I2t
70pF
Measured at
1.0MHz,
VR=4.0V
I2t Rating for Fusing
200A2S t<8.3ms
Note:1.Device mounted on 100mm × 100mm × 1.6mm Cu Plate Heatsink
http://www.yeashin.com
1
REV.02 20120305
YEASHIN [ Yea Shin Technology Co., Ltd ]
