DEVICE CHARACTERISTICS
1N4728A~1N4764A
1000
500
1000
700
500
T
i
= 25 °C
(rms) = 0.1 I (dc)
T
i
= 25 °C
J
J
Z
V
= 2.7 V
(rms) = 0.1 I (dc)
Z
Z
Z
Z
f = 60 Hz
f = 60 Hz
I
= 1 mA
Z
200
200
100
47 V
27 V
100
50
5 mA
70
50
20 mA
20
10
20
10
7
5
6.2 V
5
2
1
2
1
0.1
0.2
0.5
1
2
5
10
20
50 100
1
2
3
5
7
10
V , ZENER VOLTAGE (V)
Z
20
30
50 70 100
I
, ZENER CURRENT (mA)
Z
Figure 6. Effect of Zener Current
on Zener Impedance
Figure 7. Effect of Zener Voltage
on Zener Impedance
10000
7000
5000
400
300
200
100
50
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
2000
1000
0 V BIAS
1 V BIAS
BREAKDOWN VOLTAGE
700
500
200
20
100
70
50
10
8
50% OF BREAKDOWN BIAS
20
10
4
1
2
5
10
20
50
100
7
5
V
, NOMINAL V (VOLTS)
Z
Z
Figure 9. Typical Capacitance versus VZ
2
1
0.7
0.5
1000
500
MINIMUM
MAXIMUM
+125 °C
0.2
200
100
50
0.1
0.07
0.05
0.02
0.01
0.007
0.005
20
10
75°C
+25°C
25°C
0°C
5
150°C
0.002
0.001
2
1
0.4
0.5
0.6
0.7
V , FORWARD VOLTAGE (VOLTS)
F
0.8
0.9
1
1.1
3
4
5
6
7
8
9
10
11
12
13
14
15
V
, NOMINAL ZENER VOLTAGE (VOLTS)
Z
Figure 8. Typical Leakage Current
Figure 10. Typical Forward Characteristics
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6
REV.03 20121011
YEASHIN [ Yea Shin Technology Co., Ltd ]
