BZT52B2V4S THRU BZT52B47S
Z
zk
(Ω)
I
R
(μA)@V
R
max.
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
max
45
20
10
15
15
10
5
5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
01.
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
0.8
1.0
2.0
3.0
5.0
6.0
7.0
7.5
8.5
9.0
10.0
11.0
12
14.0
15.0
17.0
18.0
20.0
22.5
25.0
27.0
29.0
32.0
35.0
■Electrical
Characteristics
（T
a
=25℃ Unless otherwise specified）
Type Number
BZT52B2V4S
BZT52B2V7S
BZT52B3V0S
BZT52B3V3S
BZT52B3V6S
BZT52B3V9S
BZT52B4V3S
BZT52B4V7S
BZT52B5V1S
BZT52B5V6S
BZT52B6V2S
BZT52B6V8S
BZT52B7V5S
BZT52B8V2S
BZT52B9V1S
BZT52B10S
BZT52B11S
BZT52B12S
BZT52B13S
BZT52B15S
BZT52B16S
BZT52B18S
BZT52B20S
BZT52B22S
BZT52B24S
BZT52B27S
BZT52B30S
BZT52B33S
BZT52B36S
BZT52B39S
BZT52B43S
BZT52B47S
Device Marking
2WX
2W1
2W2
2W3
2W4
2W5
2W6
2W7
2W8
2W9
2WA
2WB
2WC
2WD
2WE
WG
2WG
WI
2WI
WL
WM
WN
2WM
2WN
WR
2WP
2WQ
2WR
2WS
2WT
2WU
2WV
V
z
at IzT (V)
min.
2.34
2.63
2.92
3.21
3.52
3.82
4.21
4.61
5.0
5.49
6.08
6.66
7.35
8.04
8.92
9.8
10.78
11.76
12.74
14.7
15.68
17.6
19.6
21.56
23.52
26.46
29.4
32.34
35.28
38.22
42.14
46.06
typ.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
max.
2.46
2.77
3.08
3.39
3.67
3.98
4.39
4.79
5.2
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.22
12.24
13.3
15.3
16.3
18.4
20.4
22.44
24.5
27.54
30.6
33.7
36.72
39.8
43.86
47.94
Z
zt
(Ω)
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
max.
100
100
100
95
95
95
95
78
60
40
10
8
7
7
10
15
20
20
25
30
40
50
55
55
70
80
80
80
90
90
100
110
I
zk
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1
1
2/5
S-S1327
Rev. 2.2, 15-May-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YANGJIE [ YANGZHOU YANGJIE ELECTRONIC CO., LTD ]
