RoHS
BSS123W
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● V
DS
● I
D
● R
DS(ON)
( at V
GS
=10V)
● R
DS(ON)
( at V
GS
=4.5V)
100V
200mA
＜5.0ohm
＜5.5ohm
General Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● High density cell design for low R
DS(ON)
● Fast Switching Speed
Applications
● Small servo motor control
● Power MOSFET gate drivers
● Switching application
■
Absolute Maximum Ratings
(T
A
=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
V
DS
100
V
Gate-source Voltage
T
A
=25℃ @ Steady State
T
A
=70℃ @ Steady State
V
GS
±20
200
160
800
V
Drain Current
I
D
mA
Pulsed Drain Current
A
I
DM
mA
Total Power Dissipation @ T
A
=25℃
P
D
350
mW
Thermal Resistance Junction-to-Ambient @ Steady State
B
R
θJA
357
℃/
W
Junction and Storage Temperature Range
T
J
,T
STG
-55�½�+150
℃
■
Ordering Information
(Example)
PREFERED P/N
PACKING
CODE
Marking
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
BSS123
F2
B123.
3000
30000
120000
7“ reel
1/6
S-S1965
Rev.2.0,25-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YANGJIE [ YANGZHOU YANGJIE ELECTRONIC CO., LTD ]
