2SA137
Plastic-Encapsulate Transistors
PNP
TO-92MOD
Features
Power dissipation
P
CM
: 1
W (Tamb=25℃)
Collector current
I
CM
: -0.1
A
Collector-base voltage
V
V
(BR)CBO
: -300
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
1.EMTTER 2.COLLECTOR 3.BASE
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
-10
µA,
I
E
=0
Ic=
-1
mA, I
B
=0
I
E
=
-10
µA,
I
C
=0
V
CB
=
-200
V, I
E
=0
V
EB
=
-4
V, I
C
=0
V
CE
=
-10
V, I
C
=
-10
mA
I
C
=
-20
mA, I
B
=
-2
mA
I
C
=
-20
mA, I
B
=
-2
mA
V
CE
=
-30
V, I
C
=
-10
mA
V
CB
=
-30
V, I
E
=0, f=
1
MHz
-300
-300
-5
-0.1
-0.1
40
320
-0.6
-1
100
µA
µA
V
V
MHz
f
T
C
ob
5
pF
CLASSIFICATION OF h
FE(1)
Rank
Range
C
40-80
D
60-120
E
100-200
F
160-320
YANGJIE [ YANGZHOU YANGJIE ELECTRONIC CO., LTD ]
