US3416
N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
GS
=4.5V , I
D
=4A
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
V
DD
=10V , V
GS
=4.5V , R
G
=3.3Ω
I
D
=4A
V
DS
=15V , V
GS
=4.5V , I
D
=4A
V
GS
=2.5V , I
D
=3A
V
GS
=1.8V , I
D
=2A
V
GS
=V
DS
, I
D
=250uA
V
DS
=16V , V
GS
=0V , T
J
=25℃
V
DS
=16V , V
GS
=0V , T
J
=55℃
V
GS
=±8V
, V
DS
=0V
V
DS
=5V , I
D
=4A
V
DS
=0V , V
GS
=0V , f=1MHz
0.3
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Min.
20
---
---
---
Typ.
---
0.028
22
27
34
0.6
-3.21
---
---
---
28
1.4
14.8
1.43
2.87
3.8
40
42
8.8
952
90
79
Max.
---
---
28
34
42
1
---
1
5
±100
---
2.8
20.7
2.0
4.0
7.6
72
84
17.6
1333
126
111
pF
ns
nC
V
mV/℃
uA
nA
S
Ω
mΩ
Unit
V
V/℃
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25℃
I
F
=4A , dI/dt=100A/µs , T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
8.9
2.9
Max.
4.8
30
1.2
---
---
Unit
A
A
V
nS
nC
Reverse Recovery Time
Reverse Recovery Charge
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
