US3406
N-Ch 30V Fast Switching MOSFETs
General Description
The US3406 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The US3406 meet the RoHS and Green Product
requirement with full function reliability approved.
Product Summery
BV
DSS
30V
Applications
RD
S(ON)
105m
ID
3.6A
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
G
Systems.
SOT23 Pin Configuration
D
D
S
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
A
Symbol
V
DS
V
GS
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
Maximum
30
±20
3.6
2.9
15
1.4
0.9
-55 to 150
Units
V
V
A
T
A
=70°C
W
°C
Junction and Storage Temperature Range
Thermal Data
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
70
100
63
Max
90
125
80
Units
°C/W
°C/W
°C/W
1
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
