UM9926
N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Parameter
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
g
FS
C
IS S
C
OS S
C
RSS
c
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= 16V, V
GS
= 0V
V
GS
= 10V,V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
= 4.0V, I
D
= 6.5A
V
GS
= 2.5V, I
D
= 5A
V
DS
= 5.0V, I
D
= 6.5A
Min Typ
C
Max Unit
20
1
10
0.5
0.9
23
30
16
540
160
100
1.5
28
38
V
uA
uA
V
m ohm
m ohm
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
Forward Transconductance
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
c
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
V
DS
=8V, V
GS
= 0V
f =1.0MH
Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 10V,
I
D
= 1A,
V
GE N
= 4.5V,
R
L
= 10
ohm
R
GE N
= 10
ohm
V
DS
=10V, I
D
=6.5A,V
GS
=4V
V
DS
=10V, I
D
=6.5A,V
GS
=2.5V
V
DS
=10V, I
D
= 6.5 A
V
GS
=4V
15
20
36
11
6.4
4.6
1.1
2.8
C
ns
ns
ns
ns
nC
nC
nC
nC
Parameter
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =1.7A
Min Typ Max Unit
0.72
1.2
V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
2
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
