UM0004
Typical Characteristics
15
N-Ch 100V Fast Switching MOSFETs
96
V
GS
=10V
12
I
D
=2A
94
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
I
D
Drain Current (A)
9
6
V
GS
=3V
3
0
0
0.5
R
DSON
(mΩ)
92
90
88
V
DS
, Drain-to-Source Voltage (V)
1
1.5
2
2.5
4
6
V
GS
(V)
8
10
Fig.1 Typical Output Characteristics
10
Fig.2 On-Resistance vs. Gate-Source
8
I
S
Source Current(A)
6
4
T
J
=150℃
T
J
=25℃
2
0
0.00
0.25
0.50
0.75
1.00
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
1.8
Fig.4 Gate-Charge Characteristics
2.5
Normalized V
GS(th)
1.4
1
0.6
0.2
-50
0
50
100
150
Normalized On Resistance
2.0
1.5
1.0
0.5
T
J
,Junction Temperature (℃ )
-50
T
J
, Junction Temperature (℃)
0
50
100
150
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
