UD6007
P-Ch 60V Fast Switching MOSFETs
Typical Characteristics
8
210
I
D
=-6A
-I
D
Drain Current (A)
6
V
GS
=-7V
V
GS
=-5V
V
GS
=-4.5V
4
2
V
GS
=-3V
0
0
-V
DS
, Drain-to-Source Voltage (V)
0.5
1
1.5
2
R
DSON
(mΩ)
V
GS
=-10V
190
170
150
130
2
4
-V
GS
(V)
6
8
10
Fig.1 Typical Output Characteristics
6
Fig.2 On-Resistance v.s Gate-Source
10
V
DS
=-20V
-V
GS
Gate to Source Voltage (V)
8
I
D
=-6A
I
S
Source Current(A)
4
6
T
J
=150℃
2
T
J
=25℃
4
2
0
0.0
0
0
2.5
5
7.5
10
0.4
0.8
1.2
V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics Of Reverse
1.5
2.0
Fig.4 Gate-Charge Characteristics
1
0.5
0
-50
Normalized On Resistance
Normalized V
GS(th)
1.5
1.0
0.5
T
J
,Junction Temperature (
℃)
0
50
100
150
-50
0
50
100
150
T
J
, Junction Temperature (℃)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
3
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
