UD4003
P-Ch 40V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25℃ , I
D
=-1mA
V
GS
=-10V , I
D
=-8A
V
GS
=-4.5V , I
D
=-4A
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-32V , V
GS
=0V , T
J
=25℃
V
DS
=-32V , V
GS
=0V , T
J
=55℃
V
GS
=±20V
, V
DS
=0V
V
DS
=-5V , I
D
=-8A
V
DS
=-15V , V
GS
=-4.5V , I
D
=-1A
Min.
-40
---
---
---
-1.0
---
---
---
---
---
---
---
---
---
V
DD
=-15V , V
GS
=-10V , R
G
=3.3Ω,
I
D
=-1A
---
---
---
---
V
DS
=-15V , V
GS
=0V , f=1MHz
---
---
Typ.
---
-0.02
25
38
-1.6
3.72
---
---
---
10.7
11.5
3.5
3.3
22
15.7
59
5.5
1415
134
102
Max.
---
---
32
46
-2.5
---
1
5
±100
---
---
---
---
---
---
---
---
---
---
---
pF
ns
nC
Unit
V
V/℃
mΩ
V
V/℃
uA
nA
S
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=-25V , L=0.1mH , I
AS
=-20A
Min.
37
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current
Pulsed Source Current
2,6
1,6
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25℃
Min.
---
---
---
Typ.
---
---
---
Max.
-27
-54
-1.2
Unit
A
A
V
Diode Forward Voltage
2
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-28.6A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
