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UD3001K 参数 Datasheet PDF下载

UD3001K图片预览
型号: UD3001K
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道30V的快速开关MOSFET [P-Ch 30V Fast Switching MOSFETs]
分类和应用: 开关
文件页数/大小: 4 页 / 769 K
品牌: XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
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UD3001K
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25℃ , I
D
=-1mA
V
GS
=-10V , I
D
=-3A
V
GS
=-4.5V , I
D
=-2A
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-24V , V
GS
=0V , T
J
=25℃
V
DS
=-24V , V
GS
=0V , T
J
=55℃
V
GS
=±20V
, V
DS
=0V
V
DS
=-5V , I
D
=-3A
V
DS
=-15V , V
GS
=-4.5V , I
D
=-3A
Min.
-30
---
---
---
-1.2
---
---
---
---
---
---
---
---
---
V
DD
=-15V , V
GS
=-10V , R
G
=3.3Ω,
I
D
=-3A
---
---
---
---
V
DS
=-15V , V
GS
=0V , f=1MHz
---
---
Typ.
---
-0.023
42
75
-1.6
4
---
---
---
11
6.4
2.3
1.9
2.8
8.4
39
6
583
100
80
Max.
---
---
52
90
-2.5
---
-1
-5
±100
---
9.0
3.2
2.7
5.6
15.1
78.0
12.0
816
140
112
pF
ns
nC
Unit
V
V/℃
V
mV/℃
uA
nA
S
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
1,4
Pulsed Source Current
2,4
2
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25℃
I
F
=-3A , dI/dt=100A/µs , T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
7.8
2.5
Max.
-3.3
-17
-1
---
---
Unit
A
A
V
nS
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
300us , duty cycle
2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2