DDR2-400, 533
Single Rank, x8 Registered SDRAM DIMMs
VDD = +1.8V ± 0.1V, VDDQ = +1.8V ± 0.1V, VREF = VSS, f =100MHz, 0°C<TOPR <+55°C, VOUT(DC) = VDDQ/2
Symbol
-5
-3.75
Units
Parameter
DDR2-400
DDR2-533
MIN
MAX
MIN
MAX
Active bank A to Active bank B command tRRD
7.5
2
-
7.5
2
15
-
ns
tCK
ns
tCK
tCCD
tWR
A to
B command period
CAS
CAS
Write recovery time
15
-
-
WR+tRP
-
WR+tRP
-
Auto Precharge write recovery + Precharge tDAL
time
Internal Write to Read command delay
tWTR
10
7.5
2
-
-
-
7.5
7.5
2
-
-
-
ns
Internal Read to Precharge command delay tRTP
Exit precharge power down to any non-Read tXP
command
ns
tCK
Exit Self-Refresh to Read command
tXSRD
200
-
200
-
tCK
ns
tRFC+10
-
tRFC+10
-
Exit Self-Refresh to non-Read command tXSNR
CKE minimum high and low pulse width tCKE
3
-
-
3
-
0
-
tCK
µs
Average periodic refresh interval
OCD drive mode output delay
tREFI
tOIT
tDELAY
7.8
7.8
0
12
12
ns
ns
tIS+tCK
+tIH
-
tIS+tCK
+tIH
-
CKE low to CK,
uncertainty
CK
Note: These parameters are applicable for all 3 chip manufacturers, Micron, Infineon, and Samsung.
DDR2_RDIMM_1 rank_x8_spec
Rev. 1.0 - December, 04
Wintec Industries, Inc., reserves the right to change datasheets and/or products without any notice.
2004 Wintec Industries, Inc.
8
XILINX [ XILINX, INC ]
