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DS312_09 参数 Datasheet PDF下载

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型号: DS312_09
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内容描述: 的Spartan- 3E FPGA系列:介绍和订购信息 [Spartan-3E FPGA Family: Introduction and Ordering Information]
分类和应用:
文件页数/大小: 233 页 / 5527 K
品牌: XILINX [ XILINX, INC ]
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R
Functional Description  
The Internal Structure of the Block RAM  
Block RAM  
The block RAM has a dual port structure. The two identical  
data ports called A and B permit independent access to the  
common block RAM, which has a maximum capacity of  
18,432 bits, or 16,384 bits with no parity bits (see parity bits  
description in Table 22). Each port has its own dedicated  
set of data, control, and clock lines for synchronous read  
and write operations. There are four basic data paths, as  
shown in Figure 30:  
For additional information, refer to the “Using Block RAM”  
chapter in UG331.  
Spartan-3E devices incorporate 4 to 36 dedicated block  
RAMs, which are organized as dual-port configurable  
18 Kbit blocks. Functionally, the block RAM is identical to  
the Spartan-3 architecture block RAM. Block RAM synchro-  
nously stores large amounts of data while distributed RAM,  
previously described, is better suited for buffering small  
amounts of data anywhere along signal paths. This section  
describes basic block RAM functions.  
1. Write to and read from Port A  
2. Write to and read from Port B  
3. Data transfer from Port A to Port B  
4. Data transfer from Port B to Port A  
Each block RAM is configurable by setting the content’s ini-  
tial values, default signal value of the output registers, port  
aspect ratios, and write modes. Block RAM can be used in  
single-port or dual-port modes.  
Arrangement of RAM Blocks on Die  
3
Write  
Read  
Read  
Write  
The block RAMs are located together with the multipliers on  
the die in one or two columns depending on the size of the  
device. The XC3S100E has one column of block RAM. The  
Spartan-3E devices ranging from the XC3S250E to  
XC3S1600E have two columns of block RAM. Table 21  
shows the number of RAM blocks, the data storage capac-  
ity, and the number of columns for each device. Row(s) of  
CLBs are located above and below each block RAM col-  
umn.  
4
Spartan-3E  
Dual-Port  
Block RAM  
Write  
Write  
2
1
Read  
Read  
DS312-2_01_020705  
Table 21: Number of RAM Blocks by Device  
Figure 30: Block RAM Data Paths  
Total  
Total  
Number of Ports  
A choice among primitives determines whether the block  
RAM functions as dual- or single-port memory. A name of  
the form RAMB16_S[w ]_S[w ] calls out the dual-port prim-  
itive, where the integers w and w specify the total data  
path width at ports A and B, respectively. Thus, a  
RAMB16_S9_S18 is a dual-port RAM with a 9-bit Port A  
and an 18-bit Port B. A name of the form RAMB16_S[w]  
identifies the single-port primitive, where the integer w  
specifies the total data path width of the lone port A. A  
RAMB16_S18 is a single-port RAM with an 18-bit port.  
Number of Addressable  
RAM  
Blocks  
Number  
of  
Columns  
Locations  
(bits)  
Device  
A
B
XC3S100E  
XC3S250E  
XC3S500E  
XC3S1200E  
XC3S1600E  
4
73,728  
221,184  
368,640  
516,096  
663,552  
1
2
2
2
2
A
B
12  
20  
28  
36  
Port Aspect Ratios  
Immediately adjacent to each block RAM is an embedded  
18x18 hardware multiplier. The upper 16 bits of the block  
RAM's Port A Data input bus are shared with the upper 16  
bits of the A multiplicand input bus of the multiplier. Similarly,  
the upper 16 bits of Port B's data input bus are shared with  
the B multiplicand input bus of the multiplier.  
Each port of the block RAM can be configured indepen-  
dently to select a number of different possible widths for the  
data input (DI) and data output (DO) signals as shown in  
Table 22.  
DS312-2 (v3.8) August 26, 2009  
www.xilinx.com  
35  
Product Specification  
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