A
PPLICATION
N
OTE
A V A I LABLE
AN56
16K
X20C16
High Speed AUTOSTORE
™
NOVRAM
DESCRIPTION
2K x 8 Bit
FEATURES
• Fast access time: 35ns, 45ns, 55ns
• High reliability
—Endurance: 1,000,000 nonvolatile store
operations
—Retention: 100 years minimum
• AUTOSTORE NOVRAM
—Automatically stores RAM data into the
EEPROM array when V
CC
low threshold
is detected
—User enabled option
—Open drain autostore status output pin
• Power-on recall
—EEPROM data automatically recalled into RAM
upon power-up
• Software data protection
—Locks out inadvertent store operations
• Low power CMOS
—Standby: 250µA
• Infinite EEPROM array recall, and RAM read and
write cycles
BLOCK DIAGRAM
et
AS
e
Row
Select
ol
P
The NOVRAM design allows data to be easily trans-
ferred from RAM to EEPROM (store) and EEPROM to
RAM (recall). The store operation is completed in 5ms
or less and the recall operation is completed in 10µs or
less. An automatic array recall operation reloads the
contents of the EEPROM into RAM upon power-up.
Xicor NOVRAMS are designed for unlimited write
operations to RAM, either from the host or recalls from
EEPROM, and a minimum 1,000,000 store operations
to the EEPROM. Data retention is specified to be
greater than 100 years.
V
CC
Sense
EEPROM Array
bs
ro
The Xicor X20C16 is a 2K x 8 NOVRAM featuring a
high-speed static RAM overlaid bit-for-bit with a non-
volatile electrically erasable PROM (EEPROM) and
the AUTOSTORE feature which automatically saves
the RAM contents to EEPROM at power-down. The
X20C16 is fabricated with advanced CMOS floating
gate technology to achieve high speed with low power
and wide power-supply margin. The X20C16 features
a compatible JEDEC approved pinout for byte-wide
memories, for industry standard RAMs, ROMs,
EPROMs, and EEPROMs.
A
3
–A
8
O
CE
OE
WE
NE
A
0
–A
2
A
9
–A
10
Control
Logic
Column Select
&
I/OS
I/O
0
–I/O
7
REV 1.0 6/21/00
ST
O
R
E
High Speed
2K x 8
SRAM
Array
R
EC
AL
L
du
www.xicor.com
Characteristics subject to change without notice.
ct
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XICOR [ XICOR INC. ]
